BFQ17 datasheet(2/6 Pages) PHILIPS

2 / 6 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BFQ17

DESCRIPTION

NPN transistor in a SOT89 plastic

envelope intended for application in

thick and thin-film circuits. The

transistor has extremely good

intermodulation properties and a high

power gain.

PINNING

DESCRIPTION

Code: FA

emitter

collector

base

Fig.1 SOT89.

page

Bottom view

MBK514

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

TYP. MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

ICM

peak collector current

−

300

Ptot

total power dissipation

up to Ts = 145 °C (note 1)

−

transition frequency

IC = 150 mA; VCE = 15 V; f = 500 MHz;

Tj = 25 °C

1.5

−

GHz

Cre

feedback capacitance

IC = 10 mA; VCE = 15 V; f = 1 MHz;

Tamb = 25 °C

1.9

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCER

collector-emitter voltage

RBE ≤ 50 Ω−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

DC collector current

−

150

ICM

peak collector current

> 1 MHz

−

300

Ptot

total power dissipation

up to Ts = 145 °C (note 1)

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

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