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BFQ17 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BFQ17 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 6 page ![]() September 1995 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 Fig.2 DC current gain as a function of collector current. VCE = 5 V; Tj =25 °C. handbook, halfpage MBB365 0 160 120 40 0 100 200 I (mA) C FE h 80 IE =ie = 0; f = 1 MHz; Tj =25 °C. Fig.3 Collector capacitance as a function of collector-base voltage. handbook, halfpage 010 20 10 0 8 MBB828 30 6 4 2 C c (pF) VCB (V) 40 Fig.4 Transition frequency as a function of collector current. VCE = 15 V; f = 500 MHz; Tj =25 °C. handbook, halfpage MBB364 0 40 80 160 2 1.6 0.8 0 1.2 120 I (mA) C (GHz) T f 0.4 |
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