BFQ231 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN video transistors

BFQ231; BFQ231A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BFQ231

−

100

BFQ231A

−

115

VCEO

collector-emitter voltage

open base

BFQ231

−

BFQ231A

−

VCER

collector-emitter voltage

RBE = 100 Ω

BFQ231

−

BFQ231A

−

110

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

300

Ptot

total power dissipation

Ts ≤ 65 °C; notes 1 and 2; see Fig.3 −

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point note 1

K/W

Rth j-a

thermal resistance from junction to ambient

185

K/W

Rth s-a

thermal resistance from soldering point to ambient

100

K/W

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