BFQ251 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1998 Oct 06

Philips Semiconductors

Product speciﬁcation

PNP video transistor

BFQ251

FEATURES

• High breakdown voltages

• Low output capacitance

• High gain bandwidth

• Good thermal stability

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Buffer/driver in high-resolution

colour graphics monitors.

DESCRIPTION

PNP video transistor in a SOT54

(TO-92) plastic package.

NPN complement: BFQ231.

PINNING

DESCRIPTION

base

collector

emitter

Fig.1

Simplified outline

(SOT54; TO-92).

page

MSB033

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−−100

VCER

collector-emitter voltage

RBE = 100 Ω

−−−95

collector current (DC)

−−−300

Ptot

total power dissipation

Ts ≤ 65 °C; note 1

−−

hFE

DC current gain

IC = −50 mA; VCE = −10 V

−

transition frequency

IC = −50 mA; VCE = −10 V; Tamb =25 °C 1

1.3

−

GHz

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−100

VCEO

collector-emitter voltage

open base

−−65

VCER

collector-emitter voltage

RBE = 100 Ω−

−95

VEBO

emitter-base voltage

open collector

−−3V

collector current (DC)

−−300

Ptot

total power dissipation

Ts ≤ 65 °C; notes 1 and 2; see Fig.3

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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