BFQ251 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1998 Oct 06

Philips Semiconductors

Product speciﬁcation

PNP video transistor

BFQ251

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

note 1

K/W

Rth j-a

thermal resistance from junction to ambient

185

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = −0.1 mA; IE =0

−100 −−

V(BR)CEO

collector-emitter breakdown voltage IC = −10 mA; IB =0

−65

−−

V(BR)CER

collector-emitter breakdown voltage IC = −10 mA; RBE = 100 Ω−95

−−

V(BR)EBO

emitter-base breakdown voltage

IE = −0.1 mA; IC =0

−3

−−

ICES

collector-emitter cut-off current

IB = 0; VCE = −50 V

−−−100 µA

ICBO

collector-base cut-off current

IE = 0; VCB = −50 V

−−−20

µA

hFE

DC current gain

IC = −50 mA; VCE = −10 V; see Fig.4

−

Ccb

collector-base capacitance

IC =ic = 0; VCB = −10 V; f = 1 MHz;

see Fig.5

−

transition frequency

IC = −50; VCE = −10 V; see Fig.6

1.3

−

GHz

Fig.2 DC SOAR.

Tamb =25 °C.

handbook, halfpage

−40

−100

−400

−300

−100

−200

MEA232 - 1

−20

−60

−80

(mA)

VCEO (V)

Fig.3 Power derating curve.

handbook, halfpage

100

200

0.8

0.6

0.2

0.4

MEA228 - 1

150

1.0

1.2

Ts (

oC)

Ptot

(W)

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