BFQ67T datasheet(2/12 Pages) PHILIPS

2 / 12 page

2000 Mar 06

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67T

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability

• SOT416 (SC-75) envelope.

APPLICATIONS

Wideband applications such as

satellite TV tuners and RF portable

communications equipment up to

2 GHz.

DESCRIPTION

NPN transistor in a plastic SOT416

(SC-75) package.

PINNING

DESCRIPTION

base

emitter

collector

fpage

MBK090

Top view

Fig.1 SOT416.

Marking code: V2.

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

collector current (DC)

−−

Ptot

total power dissipation

Ts ≤ 75 °C; note 1

−−

150

hFE

DC current gain

IC = 15 mA; VCE =5V; Tj =25 °C 60

100

−

transition frequency

IC = 15 mA; VCE = 8 V; f = 2 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

IC = 15 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

noise ﬁgure

IC = 5 mA; VCE = 8 V; f = 1 GHz

−

1.3

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

Ptot

total power dissipation

Ts ≤ 75 °C; note 1

−

150

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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