2003 Dec 17

3

NXP Semiconductors

Product data sheet

High-speed diode

BAL74

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on an FR4 printed-circuit board.

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1.

Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX. UNIT

VRRM

repetitive peak reverse voltage

−

50

V

VR

continuous reverse voltage

−

50

V

IF

continuous forward current

see Fig.2; note 1

−

215

mA

IFRM

repetitive peak forward current

−

500

mA

IFSM

non-repetitive peak forward current

square wave; Tj = 25 °C prior to surge;

see Fig.4

tp = 1 µs

−

4

A

tp = 1 ms

−

1

A

tp = 1 s

−

0.5

A

Ptot

total power dissipation

Tamb = 25 °C; note 1

−

250

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

VF

forward voltage

see Fig.3

IF = 1 mA

715

mV

IF = 10 mA

855

mV

IF = 50 mA

1

V

IF = 150 mA

1.25

V

IR

reverse current

see Fig.5

VR = 50 V

0.1

µA

VR = 50 V; Tj = 150 °C

100

µA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

2

pF

trr

reverse recovery time

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

4

ns

Vfr

forward recovery voltage

when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75

V

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-tp)

thermal resistance from junction to tie-point

330

K/W

Rth(j-a)

thermal resistance from junction to ambient

note 1

500

K/W