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BFR53 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BFR53 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 1997 Oct 28 4 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 Fig.2 DC current gain as a function of collector current; typical values. VCE = 5 V; Tj =25 °C. handbook, halfpage I (mA) C MEA458 0 100 80 60 50 50 100 FE h 70 90 Fig.3 Collector capacitance as a function of collector-base voltage; typical values. IE =ie = 0; f = 1 MHz; Tj =25 °C. handbook, halfpage MEA457 016 2.0 0 1.6 20 1.2 0.4 C c (pF) VCB (V) 4 0.8 812 Fig.4 Transition frequency as a function of collector current; typical values. VCE = 5 V; f = 500 MHz; Tj =25 °C. handbook, halfpage I (mA) C MEA459 0 2.2 1.8 1.4 1.0 50 T f (GHz) 25 Fig.5 Gain as a function of frequency; typical values. IC = 30 mA; VCE = 5 V; Tamb =25 °C. handbook, halfpage MEA455 0 20 30 10 2 10 3 10 4 10 f (MHz) gain (dB) I S I 12 2 G UM |
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