BFS20W datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 21

Philips Semiconductors

Product speciﬁcation

NPN medium frequency transistor

BFS20W

THERMAL CHARACTERISTICS

Note

1. Refer to SOT323 (SC-70) standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−−

100

IE = 0; VCB = 20 V; Tj = 100 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

100

hFE

DC current gain

IC = 7 mA; VCE = 10 V

−

VBE

base-emitter voltage

IC = 7 mA; VCE =10V

−

740

900

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−

Cre

feedback capacitance

IC = 0; VCE = 10 V; f = 1 MHz

−

350

−

transition frequency

IC = 5 mA; VCE = 10 V; f = 100 MHz

360

470

−

MHz

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