BFS20W datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 Apr 21

Philips Semiconductors

Product speciﬁcation

NPN medium frequency transistor

BFS20W

Fig.2

DC current gain as a function of collector

current; typical values.

VCE =10V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

103

102

MGR830

10−1

110

102

IC (mA)

hFE

(2)

(3)

(1)

Fig.3

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGR831

10−1

110

IC (mA)

VCEsat

(mV)

(1)

103

102

(2)

(3)

Fig.4

Base-emitter voltage as a function of

collector current; typical values.

VCE =10V.

(1) Tamb = −100 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

1000

200

MGR832

400

600

800

VBE

(mV)

10−1

110

102

IC (mA)

(2)

(3)

(1)

Fig.5

Collector current as a function of

collector-emitter voltage; typical values.

Tamb =25 °C.

(1) IB = 280 µA.

(2) IB = 230 µA.

(3) IB = 180 µA.

(4) IB = 130 µA.

(5) IB =80 µA.

(6) IB =30 µA.

handbook, halfpage

010

VCE (V)

(mA)

(5)

(6)

(1)

MGR833

2468

(2)

(3)

(4)

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