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BFT45 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFT45 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1997 Apr 18 2 Philips Semiconductors Product specification PNP high-voltage transistor BFT45 FEATURES • Low current (max. 500 mA) • High voltage (max. 250 V). APPLICATIONS • High voltage switching and amplification • Industrial and telephone applications. DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM334 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −−−250 V VCEO collector-emitter voltage open base −−−250 V ICM peak collector current −−−1A Ptot total power dissipation Tcase ≤ 50 °C −− 5W hFE DC current gain IC = −10 mA; VCE = −10 V 50 − 150 Cc collector capacitance IE =ie = 0; VCE = −20 V; f = 1 MHz −− 15 pF fT transition frequency IC = −15 mA; VCE = −10 V; f = 100 MHz − 70 − MHz |
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