BFT45 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Apr 18

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistor

BFT45

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−250

VCEO

collector-emitter voltage

open base

−−250

VEBO

emitter-base voltage

open collector

−−5V

collector current (DC)

−−500

ICM

peak collector current

−−1A

IBM

peak base current

−−200

Ptot

total power dissipation

Tcase ≤ 50 °C

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

200

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air

200

K/W

Rth j-c

thermal resistance from junction to case

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

ICBO

collector cut-off current

IE = 0; VCB = −200 V

−−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −3V

−−−5

µA

hFE

DC current gain

IC = −1 mA; VCE = −10 V

−−

IC = −10 mA; VCE = −10 V

−

150

IC = −100 mA; VCE = −10 V; note 1

−−

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −1mA

−−−0.5

IC = −100 mA; IB = −10 mA

−−−1.4

IC = −500 mA; IB = −100 mA; note 1

−−−3V

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −1mA

−−−0.5

IC = −100 mA; IB = −10 mA

−−−0.9

IC = −500 mA; IB = −100 mA; note 1

−−−1.2

collector capacitance

IE =ie = 0; VCB = −20 V; f = 1 MHz

−−

transition frequency

IC = −15 mA; VCE = −10 V; f = 100 MHz −

−

MHz

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