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BFT93W Datasheet(PDF) 13 Page - NXP Semiconductors |
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BFT93W Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 24 page ![]() March 1994 13 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W Table 5 Common emitter scattering parameters: VCE = −5 V; IC = −20 mA. Table 6 Noise data: VCE = −5 V; IC = −20 mA. f (MHz) s11 s21 s12 s22 GUM (dB) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 40 0.450 −49.1 25.274 154.6 0.018 72.5 0.830 −24.1 34.1 100 0.475 −99.1 18.682 130.2 0.034 59.2 0.608 −47.9 28.5 200 0.502 −135.9 11.661 110.7 0.047 54.5 0.379 −67.2 23.3 300 0.516 −151.8 8.244 101.0 0.058 55.6 0.270 −77.9 20.0 400 0.526 −161.1 6.342 94.7 0.068 58.1 0.215 −86.1 17.7 500 0.530 −167.1 5.156 90.2 0.079 60.1 0.185 −92.5 15.8 600 0.534 −171.9 4.350 86.3 0.089 61.9 0.169 −96.7 14.4 700 0.535 −175.7 3.768 83.0 0.101 63.2 0.157 −98.7 13.1 800 0.536 −179.1 3.326 80.1 0.112 64.0 0.147 −99.8 12.0 900 0.538 177.7 2.980 77.3 0.123 64.8 0.137 −100.5 11.1 1000 0.541 174.9 2.703 74.9 0.134 65.4 0.127 −101.9 10.2 1200 0.554 169.8 2.285 70.3 0.154 66.2 0.111 −109.1 8.8 1400 0.566 166.1 1.995 65.9 0.175 66.6 0.112 −118.8 7.7 1600 0.571 162.6 1.777 61.7 0.195 66.0 0.125 −122.9 6.8 1800 0.573 158.8 1.616 58.2 0.214 66.0 0.130 −123.1 6.0 2000 0.585 154.4 1.488 55.0 0.234 66.1 0.127 −126.2 5.3 2200 0.604 151.0 1.380 52.4 0.252 66.2 0.130 −135.1 4.8 2400 0.624 148.8 1.285 49.4 0.268 66.2 0.152 −143.0 4.4 2600 0.633 147.1 1.200 46.6 0.282 65.5 0.180 −144.7 3.9 2800 0.626 144.3 1.148 43.5 0.299 65.0 0.199 −143.3 3.5 3000 0.629 140.8 1.100 41.0 0.319 64.7 0.208 −143.7 3.2 f (MHz) Fmin (dB) Γ opt Rn (ratio) (deg) 500 2.80 0.301 100.8 0.610 1000 3.60 0.356 152.2 0.280 |
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