Specifications and information are subject to change without notice

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April 2006

ECP100D

1 Watt, High Linearity InGaP HBT Amplifier

Product Information

Product Features

16pin 4mm QFN package

Applications

Repeaters

Product Description

The ECP100D is a high dynamic range driver amplifier

in a low-cost surface mount package. The InGaP/GaAs

HBT is able to achieve superior performance for various

narrowband-tuned application circuits with up to +46

dBm OIP3 and +31.5 dBm of compressed 1-dB power.

It is housed in an industry standard Lead-

free/Green/RoHS-compliant 16-pin 4x4mm QFN SMT

package. All devices are 100% RF and DC tested.

The product is targeted for use as driver amplifier for

various

current

and

next

generation

wireless

technologies such as GPRS, GSM, CDMA, W-CDMA,

and UMTS, where high linearity and high power is

required. The internal active bias allows the ECP100D

to maintain high linearity over temperature and operate

directly off a +5 V supply.

Functional Diagram

Function

Pin No.

Vref

1

RF Input

3

RF Output

10, 11

Vbias

16

GND

Backside Paddle

N/C or GND

2, 4-9, 12-15

Parameter

Units Min Typ Max

Operational Bandwidth

MHz

400

2300

Test Frequency

MHz

2140

Gain

dB

10

11

Input Return Loss

dB

18

Output Return Loss

dB

8

Output P1dB

dBm

+29

+31.5

dBm

+43.8

+45

IS-95 Channel Power

@ -45 dBc ACPR, 1960MHz

dBm

+25.5

W-CDMA Channel Power

@ -45 dBc ACPR, 2140 MHz

dBm

+23

Noise Figure

dB

6.3

mA

400

450

500

Device Voltage, Vcc

V

5

1. Test conditions unless otherwise noted: T = 25 ºC, Vsupply = +5 V in a tuned application circuit.

2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions into

pins 10, 11 and 16. It is expected that the current can increase by an additional 90 mA at P1dB.

Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will

pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current

typically will be 461 mA.)

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

qC

Storage Temperature

-65 to +125

qC

RF Input Power (continuous)

+26 dBm

Device Voltage

+8 V

Device Current

900 mA

Device Power

5 W

Junction Temperature

+250

qC

Operation of this device above any of these parameters may cause permanent damage.

Parameter

Units

Typical

Frequency

MHz

900

1960

2140

S21 – Gain

dB

18

12

11

S11

dB

-13

-11

-18

S22

dB

-7

-10

-8

Output P1dB

dBm

+31

+32

+31.5

Output IP3

dBm

+46

+46

+45

IS-95A Channel Power

@ -45 dBc ACPR

dBm

+25.

5

+25.5

W-CDMA Channel Power

@ -45 dBc ACPR

dBm

+23

Noise Figure

dB

7.0

5.5

6.2

+5 V @ 450 mA

4. Typical parameters reflect performance in a tuned application circuit at +25 C.

Ordering Information

Part No.

Description

ECP100D-G

1 Watt InGaP HBT Amplifier

(Lead-free/Green/RoHS-compliant 16-pin 4x4mm Pkg.)

ECP100D-PCB900

900 MHz Evaluation Board

ECP100D-PCB1960

1960 MHz Evaluation Board

ECP100D-PCB2140

2140 MHz Evaluation Board

1

2

3

4

12

11

10

9

16

15

14

13

5

6

7

8

N/C

RF OUT

RF OUT

N/C

Vref

N/C

RF IN

N/C