Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 2 of 5 February 2006

AP502

UMTS-band 4W HBT Amplifier Module

Product Information

The Communications Edge

TM

Performance Graphs – Class AB Configuration (AP502-PCB)

The AP502-PCB and AP502 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for

the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the

amplifier module, as described on the next page.

Notes:

1. Please note that for reliable operation, the evaluation board will have to

be mounted to a much larger heat sink during operation and in laboratory

environments to dissipate the power consumed by the device. The use of

a convection fan is also recommended in laboratory environments.

Details of the mounting holes used in the WJ heatsink are given on the

last page of this datasheet.

2. The area around the module underneath the PCB should not contain any

soldermask in order to maintain good RF grounding.

3. For proper and safe operation in the laboratory, the power-on sequencing

should be followed:

a. Connect RF In and Out

b. Connect the voltages and ground pins as shown in the circuit.

c. Apply the RF signal

d. Power down with the reverse sequence

Narrowband S-Parameters

+25 °C, Icq=850mA

28

29

30

31

32

33

2110

2130

2150

2170

Frequency (MHz)

-20

-15

-10

-5

0

5

S21

S11

S22

Wideband S-Parameters

+25 °C, Icq=850mA

-40

-20

0

20

40

0

500

1000

1500

2000

2500

3000

Frequency (MHz)

S21

S11

S22

Gain / Output Power vs. Input Power

2140 MHz, +25 °C, Icq = 850mA

28

30

32

34

36

38

-6

-4

-2

0246

Input Power (dBm)

30

30.5

31

31.5

32

32.5

Pout

Gain

ACLR vs. Channel Power

3GPP W-CDMA, 1FA, Test Model 1+32 DPCH, ±5 MHz offset

2140 MHz, Icq=850mA

-60

-55

-50

-45

-40

18

20

22

24

26

28

Output Channel Power (dBm)

-40 C

+25 C

+85 C

IMD3, IMD5, OIP3 vs. Ouptut Power

2140 MHz, +25 °C, Icq = 850mA

-80

-70

-60

-50

-40

20

22

24

26

28

30

32

Output Power per tone (dBm)

20

30

40

50

60

IMD3L

IMD3U

IMD5

OIP3

PAE / Icc vs. Output Power

2140 MHz, +25 °C, Icq = 850mA

750

800

850

900

950

1000

22

24

26

28

30

32

34

Output Power (dBm)

0

5

10

15

20

25

Icc

PAE

DNP

DNP

DNP

DNP

DNP

DNP

DNP

DNP

DNP

0Ω

0Ω

0Ω

0Ω

10

μF

.01

μF

.01

μF

100pF

100pF

6

5

4

2

3

1

RF IN

RF OUT