Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 3 of 5 February 2006

AP502

UMTS-band 4W HBT Amplifier Module

Product Information

The Communications Edge

TM

Performance Graphs – Class B Configuration

The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency

performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).

Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at

this biasing configuration.

Notes:

1. Please note that for reliable operation, the evaluation board will have to

be mounted to a much larger heat sink during operation and in laboratory

environments to dissipate the power consumed by the device. The use of

a convection fan is also recommended in laboratory environments.

Details of the mounting holes used in the WJ heatsink are given on the

last page of this datasheet.

2. The area around the module underneath the PCB should not contain any

soldermask in order to maintain good RF grounding.

3. For proper and safe operation in the laboratory, the power-on sequencing

should be followed:

a. Connect RF In and Out

b. Connect the voltages and ground pins as shown in the circuit.

c. Apply the RF signal

d. Power down with the reverse sequence

Narrowband S-Parameters

+25 °C, Icq=275mA

26

27

28

29

30

31

2110

2130

2150

2170

Frequency (MHz)

-20

-15

-10

-5

0

5

S21

S11

S22

Wideband S-Parameters

+25 °C, Icq=275mA

-40

-20

0

20

40

0

500

1000

1500

2000

2500

3000

Frequency (MHz)

S21

S11

S22

Gain / Output Power vs. Input Power

2140 MHz, +25 °C, Icq=275mA

28

30

32

34

36

38

-2

0

2

4

6

8

10

Input Power (dBm)

25

26

27

28

29

30

Pout

Gain

ACLR vs. Channel Power

+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA

-70

-60

-50

-40

20

21

22

23

24

25

26

27

28

Output Channel Power (dBm)

±5 MHz

±10 MHz

IMD3, IMD5, OIP3 vs. Ouptut Power

2140 MHz, +25 °C, Icq=275mA

-60

-50

-40

-30

-20

20

22

24

26

28

30

32

Output Power per tone (dBm)

20

30

40

50

60

IMD3L

IMD3U

IMD5

OIP3

PAE / Icc vs. Output Power

2140 MHz, +25 °C, Icq=275mA

300

400

500

600

700

800

22

24

26

28

30

32

34

Output Power (dBm)

0

5

10

15

20

25

Icc

PAE

DNP

DNP

DNP

DNP

DNP

DNP

DNP

DNP

0Ω

730Ω

0Ω

10

μF

.01

μF

.01

μF

100pF

100pF

6

5

4

2

3

1

RF IN

RF OUT

2.2nH

DNP