2SB1424 datasheet(2/4 Pages) DGNJDZ

Part #	2SB1424

Description	Low VCE(sat) Transistor(-20V,-3A)

PDF	4 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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Low VCE(sat) Transistor(-20V,-3A)

2SB1424

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-50μA IE=0

-20

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA IB=0

-20

Emitter-base breakdown voltage

V(BR)EBO

IE=-50μA IC=0

-6

Collector cut-off current

ICBO

VCB=-20V IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V IC=-0.1A

120

390

Collector-emitter saturation voltage

VCE(sat)

IC=-2A IB=-0.1A

-0.5

Transition frequency

VCE=-2V,IC=-0.5A,

f=100MHz

240

MHz

Output Capacitance

Cobo

VCB=-10V f=1MHz IE=0

CLASSIFICATION HFE

Rank

Range

120-270

180-390

Marking

AEQ

AER

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

2SB1424 Datasheet(PDF) 2 Page - Nanjing International Group Co

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