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2SD669 Datasheet(PDF) 2 Page - Nanjing International Group Co |
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2SD669 Datasheet(HTML) 2 Page - Nanjing International Group Co |
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2 / 5 page ![]() Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 2DS669 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=160V, IE=0 10 µA Emitter cut-off current IEBO VEB=4V, IC=0 10 µA hFE(1) VCE=5V, IC=150mA 2SD669 60 320 DC current gain hFE(2) VCE=5V, IC=500mA 30 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1 V Base-emitter voltage VBE VCE=5V, IC=150mA 1.5 V Transition frequency fT VCE=5V, IC=150mA 140 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF CLASSIFICATION OF hFE(1) Rank B C D Range 2SD669 60-120 100-200 160-320 (/(&75,&$/&+$5$&7(5,67,&6 a T =25 unless otherwise specified Dongguan Nanjing Electronics Ltd. www.dgnjdz.com 2/5 |
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