RN2412,RN2413

2001-02-08 1/4

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2412,RN2413

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1412, RN1413

Equivalent Circuit

Characterisstic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

JEDEC

EIAJ

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g

Unit in mm

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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

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to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

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