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RN2413 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN2413 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() RN2412,RN2413 2001-02-08 2/4 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-off current ICBO ― VCB = −50V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO ― VEB = −5V, IC = 0 ― ― −100 nA DC current gain hFE ― VCE = −5V, IC = −1mA 120 ― 400 ― Collector-emitter saturation voltage VCE (sat) ― IC = −5mA, IB = −0.25mA ― −0.1 −0.3 V Translation frequency fT ― VCE = −10V, IC = −5mA ― 250 ― MHz Collector output capacitance Cob ― VCB = −10V, IE = 0, f = 1MHz ― 3 6 pF RN2412 15.4 22 28.6 Input resistor RN2413 R1 ― ― 32.9 47 61.1 kΩ |
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