PUMX2 datasheet(3/8 Pages) PHILIPS

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PUMX2_1

Product data sheet

Rev. 01 — 10 November 2005

3 of 8

Philips Semiconductors

PUMX2

NPN/NPN general-purpose double transistors

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Characteristics

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

694

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

417

K/W

Table 7:

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base

cut-off current

VCB =60V; IE = 0 A

100

VCB =60V; IE =0A;

Tj = 150 °C

--50

µA

IEBO

emitter-base

cut-off current

VEB =7V; IC = 0 A

100

hFE

DC current gain

VCE =6V; IC = 1 mA

120

250

560

VCEsat

collector-emitter

saturation voltage

IC = 50 mA; IB = 5 mA

250

transition

frequency

VCE =12V; IE = 2 mA;

f = 100 MHz

100

MHz

collector

capacitance

VCB =12V; IE =ie =0A;

f = 1 MHz

--3

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