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BLF147 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF147 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() September 1992 5 Philips Semiconductors Product specification VHF power MOS transistor BLF147 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 8 A; VGS = 10 V. handbook, halfpage 0 50 100 150 170 150 110 90 130 MGP052 RDS (on) (m Ω) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 400 800 1200 1400 010 20 VDS (V) C (pF) Cis Cos 30 40 MRA903 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 100 200 300 400 500 010 20 Crs (pF) 30 VDS (V) 40 MRA902 |
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