BLF147 datasheet(6/12 Pages) PHILIPS

6 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF147

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; unless otherwise speciﬁed.

RF performance in SSB operation in a common source class-AB circuit.

f1 = 28.000 MHz; f2 = 28.001 MHz.

Notes

1. Optimum load impedance: 2.1 + j0

Ω.

2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power

these figures should be decreased by 6 dB.

(W)

(MHz)

VDS

(V)

IDQ

(A)

(dB)

ηD

(%)

(dB)

(note 2)

(dB)

(note 2)

20 to 150 (PEP)

> 17

typ. 19

> 35

typ. 40

<−30

typ.

−34

<−30

typ.

−40

Ruggedness in class-AB operation

The BLF147 is capable of withstanding a load mismatch

corresponding to VSWR = 50 through all phases under the

following conditions:

VDS = 28 V; f = 28 MHz at rated load power.

Fig.9

Gain as a function of load power, typical

values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

200

MGP053

100

PL (W) PEP

(dB)

Fig.10 Efficiency as a function of load power,

typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

100

200

MGP054

ηD

(%)

PL (W) PEP

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