BLF2045 datasheet(5/11 Pages) PHILIPS

5 / 11 page

1999 Dec 06

Philips Semiconductors

Preliminary specification

UHF power LDMOS transistor

BLF2045

VDS =26 V; IDQ = 180 mA; Th

≤ 25 °C;

f1 =2000 MHz; f2 = 2000.1 MHz..

Fig.4

Intermodulation distortion as a function of

peak envelope load power; typical values.

-60

-40

-20

20304050

PL (PEP) (W)

dim

(dBc)

(1) IDQ =140mA

(2) IDQ = 180mA

(3) IDQ = 220mA

VDS =26 V;Th ≤ 25 °C; f1 =2000 MHz; f2 = 2000.1 MHz.

Fig.5

Intermodulation distortion as a function of

peak envelope load power; typical values.

-60

-40

-20

20304050

L (PEP) (W)

(dBc)

(1)

(2)

(3)

Fig.6

Input impedance as a function of frequency

(series components); typical values.

VDS =26 V; IDQ = 180 mA; PL =45 W; Th

≤ 25 °C.

1.822.2

f (GHz)

(

Ω)

Fig.7

Load impedance as a function of frequency

(series components); typical values.

VDS =26 V; IDQ = 180 mA; PL =45 W; Th

≤ 25 °C.

-6

-4

-2

1.822.2

f (GHz)

(

Ω)

BLF2045 Datasheet(PDF) 5 Page - NXP Semiconductors

BLF2045 Datasheet(HTML) 5 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL