1999 Dec 06

3

Philips Semiconductors

Preliminary specification

UHF power LDMOS transistor

BLF2045

THERMAL CHARACTERISTICS

Note

1.

Thermal resistance is determined under specified RF operating conditions.

CHARACTERISTICS

°C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to heatsink

°C;

note 1

2K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source breakdown voltage

65

−−

V

gate-source threshold voltage

1.5

−

3.5

V

drain-source leakage current

−−

5

µA

drain cut-off current

9

−−

A

gate leakage current

−−

125

nA

forward transconductance

−

2

−

S

drain-source on-state resistance

−

340

−

m

Ω

input capacitance

−

38

−

pF

output capacitance

−

31

−

pF

feedback capacitance

−

1.7

−

pF

1

10

100

0

102030

C

(pF)

Fig.2 Input, output and feedback capacitance as

functions of drain-source voltage, typical values.