1996 Oct 21

3

Philips Semiconductors

Product specification

VHF power MOS transistor

BLF246

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±20

V

DC drain current

−

13

A

total power dissipation

−

130

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to mounting base

1.35

K/W

thermal resistance from mounting base to heatsink

0.2

K/W

Fig.2 DC SOAR.

handbook, halfpage

1

10

110

(1)

50

ID

(A)

VDS (V)

MRA931

(2)

Fig.3 Power derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0

50

100

150

200

150

50

0

100

MGG104

Ptot

(W)

Th (°C)

(1)

(2)