BLF248 datasheet(6/13 Pages) PHILIPS

6 / 13 page

September 1992

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF248

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise speciﬁed.

RF performance in a linear ampliﬁer in a common source class-AB circuit.

RGS = 536 Ω per section; optimum load impedance per section = 0.79 − j0.11 Ω.

MODE OF OPERATION

(MHz)

VDS

(V)

(W)

(dB)

(%)

class-AB

225

300

> 10

typ. 11.5

> 55

typ. 65

175

300

typ. 13

typ. 67

Ruggedness in class-AB operation

The BLF248 is capable of withstanding a load mismatch

corresponding to VSWR = 50 through all phases under the

following conditions:

VDS = 28 V; f = 225 MHz at rated output power.

Fig.9

Power gain and efficiency as functions of

load power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;

RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per

section); f = 225 MHz.

handbook, halfpage

100

200

400

MGP209

300

PL (W)

(dB)

ηD

(%)

ηD

Th = 25 °C

°C

Fig.10 Load power as a function of input power,

typical values.

Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;

RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per

section); f = 225 MHz.

handbook, halfpage

010

400

300

100

200

MGP210

(W)

PIN (W)

Th = 25 °C

°C

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