BLF543 datasheet(4/14 Pages) PHILIPS

4 / 14 page

October 1992

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF543

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 5 mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 28 V

−−

0.5

IGSS

gate-source leakage current

±VGS = 20 V; VDS =0

−−

µA

VGS(th)

gate-source threshold voltage

ID = 20 mA; VDS = 10 V

−

∆V

GS(th)

gate-source voltage difference of

matched pairs

ID = 20 mA; VDS = 10 V

−−

100

gfs

forward transconductance

ID = 0.6 A; VDS = 10 V

300

450

−

RDS(on)

drain-source on-state resistance

ID = 0.6 A; VGS = 10 V

−

1.7

2.5

Ω

IDSX

on-state drain current

VGS = 15 V; VDS = 10 V

−

2.4

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

3.2

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS = 10 V.

handbook, halfpage

−2

−4

MDA491

T.C.

(mV/K)

ID (A)

10−2

10−1

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS = 10 V; Tj = 25 °C.

handbook, halfpage

VGS (V)

(A)

MDA495

BLF543 Datasheet(PDF) 4 Page - NXP Semiconductors

BLF543 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL