Wuxi NCE Power Co., Ltd

Page

v2.0

2

NCE0125AI

http://www.ncepower.com

Thermal Characteristic

RθJC

Thermal Resistance, Junction-to-Case (Note 2)

2

℃

/W

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Condition

Min Typ

Max

Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=250μA

100

110

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V,VGS=0V

-

-

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=250μA

0.8

1.2

1.6

V

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=15A

-

31

36

mΩ

gFS

Forward Transconductance

VDS=5V,ID=15A

-

12

-

S

Dynamic Characteristics (Note4)

Clss

Input Capacitance

VDS=50V,VGS=0V,

F=1.0MHz

-

3000

-

PF

Coss

Output Capacitance

-

92

-

PF

Crss

Reverse Transfer Capacitance

-

18.3

-

PF

Switching Characteristics (Note 4)

td(on)

Turn-on Delay Time

VDD=50V,RL=5Ω

VGS=10V,RGEN=3Ω

-

9

-

nS

tr

Turn-on Rise Time

-

9

-

nS

td(off)

Turn-Off Delay Time

-

31

-

nS

tf

Turn-Off Fall Time

-

9

-

nS

Qg

Total Gate Charge

VDS=50V,ID=25A,

VGS=10V

-

70.4

-

nC

Qgs

Gate-Source Charge

-

9.0

-

nC

Qgd

Gate-Drain Charge

-

15.3

-

nC

Drain-Source Diode Characteristics

VSD

Diode Forward Voltage (Note 3)

VGS=0V,IS=25A

-

-

1.2

V

IS

Diode Forward Current (Note 2)

-

-

-

25

A

trr

Reverse Recovery Time

TJ = 25°C, IF = 25A

di/dt = 100A/μs(Note3)

-

34

-

nS

Qrr

Reverse Recovery Charge

-

56

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS Condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω