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P25Q64LE Datasheet(PDF) 12 Page - Puya Semiconductor Co., Ltd. |
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P25Q64LE Datasheet(HTML) 12 Page - Puya Semiconductor Co., Ltd. |
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12 / 96 page ![]() P25Q64LE Datasheet Puya Semiconductor Page 12 of 96 5.4 AC Characteristics for Program and Erase Table 5-4 AC parameters for program and erase(Ta=-40°C to +85°C) Sym. Parameter 1.65V to 2.0V Units Min. Typ. Max. TESL(6) Erase Suspend Latency 30 us TPSL(6) Program Suspend Latency 30 us TPRS(4) Latency between Program Resume and next Suspend 20 us TERS(5) Latency between Erase Resume and next Suspend 20 us tPP Page program time (up to 256 bytes) 2 3 ms tPE Page erase time 10 20 ms tSE Sector erase time 10 20 ms tBE1 Block erase time for 32K bytes 10 20 ms tBE2 Block erase time for 64K bytes 10 20 ms tCE Chip erase time 10 20 ms Note 1. tCH + tCL must be greater than or equal to 1/ Frequency. 2. Typical values given for TA=25°C. Not 100% tested. 3. Only applicable as a constraint for a WRSR instruction. 4. Program operation may be interrupted as often as system request. The minimum timing of tPRS must be observed before issuing the next program suspend command. However, in order for an Program operation to make progress, tPRS ≥ 350us must be included in resume-to-suspend loop(s). Not 100% tested. 5. Erase operation may be interrupted as often as system request. The minimum timing of tERS must be observed before issuing the next erase suspend command. However, in order for an Erase operation to make progress, tERS ≥ 350us must be included in resume-to-suspend loop(s). Notes. Not 100% tested. 6. Latency time is required to complete Erase/Program Suspend operation. 7. The value guaranteed by characterization, not 100% tested in production. Figure 5-4 Serial Input Timing SCLK CS# SI MSB SO High-Z LSB tCHSL tSLCH tDVCH tCHDX tSHCH tCHSH tCHCL tCLCH tSHSL tCLH tCLL |
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