BLT13 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1996 Apr 12

Philips Semiconductors

Preliminary speciﬁcation

UHF power transistor

BLT13

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

Ptot

total power dissipation

Ts = 130 °C; note 1

−

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to

soldering point

Ptot = 1 W; Ts = 130 °C; note 1

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter; IC = 5 mA

−

V(BR)CEO

collector-emitter breakdown voltage

open base; IC = 10 mA

−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE = 1 mA

2.5

−

ICES

collector leakage current

VCE = 6 V; VBE = 0

−

0.1

hFE

DC current gain

VCE = 5 V; IC = 100 mA

150

collector capacitance

VCB = 6 V; IE = ie = 0; f = 1 MHz

−

Cre

feedback capacitance

VCE = 6 V; IC = 0; f = 1 MHz

−

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