BLT13 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1996 Apr 12

Philips Semiconductors

Preliminary speciﬁcation

UHF power transistor

BLT13

APPLICATION INFORMATION

RF performance at Ts ≤ 60 °C in a common emitter test circuit (note 1).

Note

1. Ts is the temperature at the soldering point of the collector pin.

Ruggedness in class-AB operation

The BLT13 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the

following conditions:

δ = 1 : 8; tp ≤ 5 ms; f = 1800 MHz; VCE = 8.5 V; PL = 2 W; Ts ≤ 60 °C.

MODE OF OPERATION

(MHz)

VCE

(V)

ICQ

(mA)

(W)

(dB)

(%)

Pulsed, class-AB;

δ = 1 : 8; tp ≤ 5 ms

1800

≥6

≥50

typ. 8.5

typ. 65

Fig.2

Power gain and collector efﬁciency as

functions of load power; typical values.

Pulsed, class-AB;

δ = 1 : 8; tp ≤ 5 ms; f = 1800 MHz; VCE = 6 V;

ICQ = 2 mA; tuned at PL = 2 W; Ts ≤ 60 °C.

handbook, halfpage

(dB)

MGD236

PL (W)

100

ηC

(%)

ηC

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