BLU99SLASHSL datasheet(4/17 Pages) PHILIPS

4 / 17 page

March 1993

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLU99

BLU99/SL

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Notes

1. Measured under pulse conditions: tp =50 µs; δ< 0,01.

2. Measured under pulse conditions: tp = 300 µs; δ< 0,01.

Collector-base breakdown voltage

open emitter; IC = 10 mA

V(BR)CBO

36 V

Collector-emitter breakdown voltage

open base; IC = 20 mA

V(BR)CEO

16 V

Emitter-base breakdown voltage

open collector; IE = 1 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE = 16 V

ICES

5mA

Second breakdown energy; L = 25 mH; f = 50 Hz

RBE =10 Ω

ESBR

1mJ

D.C. current gain(2)

typ.

100

IC = 0,6 A; VCE = 10 V

hFE

Transition frequency at f = 500 MHz(1)

IC = 0,6 A; VCE = 12,5 V

typ.

4,0 GHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB = 12,5 V

typ.

7,5 pF

Feedback capacitance at f = 1 MHz

IC = 0; VCE = 12,5 V

Cre

typ.

5 pF

Collector-stud capacitance

Ccs

typ.

1,2 pF

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