March 1993

2

Philips Semiconductors

Product specification

UHF power transistor

BLV103

FEATURES

• Internal matching for an optimum

wideband capability and high gain

• Emitter-ballasting resistors for

optimum temperature profile

• Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor

encapsulated in a 6-lead SOT171

flange envelope with a ceramic cap. It

is intended for common emitter,

class-AB operation in cellular radio

base stations in the 960 MHz

frequency band. All leads are isolated

from the mounting base.

PINNING - SOT171

PIN

DESCRIPTION

1

emitter

2

emitter

3

base

4

collector

5

emitter

6

emitter

QUICK REFERENCE DATA

PIN CONFIGURATION

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

c.w. class-AB

960

24

4

> 11.5

> 45

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

k, halfpage

MBA931 - 1

1

3

5

2

4

6

Top view