BLV103 datasheet(4/10 Pages) PHILIPS

4 / 10 page

March 1993

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV103

CHARACTERISTICS

Tj = 25 °C.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter;

IC =4mA

−−

V(BR)CEO

collector-emitter breakdown voltage

open base;

IC =30mA

−−

V(BR)EBO

emitter-base breakdown voltage

open collector;

IE =2mA

−−

ICES

collector-emitter leakage current

VBE =0;

VCE =30V

−−

1mA

hFE

DC current gain

VCE =25V;

IC = 300 mA

−

collector capacitance

VCB =25V;

IE =Ie =0;

f = 1 MHz

−

6.6

Cre

feedback capacitance

VCE =25V;

IC = 20 mA;

f = 1 MHz

−

3.5

4.5

Fig.4

DC current gain as a function of collector

current, typical values.

handbook, halfpage

MRA361

0.2

0.4

0.6

hFE

0.8

VCE = 25 V

5 V

IC (A)

Fig.5

Collector capacitance as a function of

collector-base voltage, typical values.

IE =ie = 0; f = 1 MHz.

handbook, halfpage

010

(pF)

VCB (V)

MRA358

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