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ISL6545IBZ Datasheet(PDF) 14 Page - Renesas Technology Corp |
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ISL6545IBZ Datasheet(HTML) 14 Page - Renesas Technology Corp |
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14 / 17 page ![]() ISL6545, ISL6545A FN6305 Rev 7.00 Page 14 of 17 October 7, 2015 BOOTSTRAP Considerations Figure 11 shows the upper gate drive (BOOT pin) supplied by a bootstrap circuit from VCC. The boot capacitor, CBOOT, develops a floating supply voltage referenced to the PHASE pin. The supply is refreshed to a voltage of VCC less the boot diode drop (VD) each time the lower MOSFET, Q2, turns on. Check that the voltage rating of the capacitor is above the maximum VCC voltage in the system; a 16V rating should be sufficient for a 12V system. A value of 0.1µF is typical for many systems driving single MOSFETs. If VCC is 12V, but VIN is lower (such as 5V), then another option is to connect the BOOT pin to 12V, and remove the BOOT cap (although, you may want to add a local cap from BOOT to GND). This will make the UGATE VGS voltage equal to (12V - 5V = 7V). That should be high enough to drive most MOSFETs, and low enough to improve the efficiency slightly. Do NOT leave the BOOT pin open, and try to get the same effect by driving BOOT through VCC and the internal diode; this path is not designed for the high current pulses that will result. For low VCC voltage applications where efficiency is very important, an external BOOT diode (in parallel with the internal one) may be considered. The external diode drop has to be lower than the internal one; the resulting higher VG-S of the upper FET will lower its rDS(ON). The modest gain in efficiency should be balanced against the extra cost and area of the external diode. +VCC ISL6545x GND LGATE/OCSET UGATE PHASE BOOT VCC +VIN VG-S VCC - VD VG-S VCC CBOOT Q1 Q2 + - FIGURE 11. UPPER GATE DRIVE BOOTSTRAP VCC + VD - ISL6545, ISL6545A |
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