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TS820 Datasheet(PDF) 2 Page - HAOPIN MICROELECTRONICS CO.,LTD

Part # TS820
Description  Blocking voltage to 800 V
PDF  5 Pages
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Manufacturer  HAOPIN [HAOPIN MICROELECTRONICS CO.,LTD]
Direct Link  http://www.haopin.com/eindex.asp
Logo HAOPIN - HAOPIN MICROELECTRONICS CO.,LTD

TS820 Datasheet(HTML) 2 Page - HAOPIN MICROELECTRONICS CO.,LTD

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Limiting values in accordance with the Maximum system(IEC 134)
2/5
http://www.haopin.com
HAOPIN MICROELECTRONICS CO.,LTD.
TM
HPM
SCRs
TS820
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VV
DRM
RRM
I
T(RMS)
I
T(AV)
I
TSM
It
2
DI /dt
T
I
GM
V
RGM
P
GM
T
stg
T
j
P
G(AV)
Repetitive peak off-state
Voltages
RMS on-state current
Average on-state current
Non-repetitive peak
on-state current
I t for fusing
2
Critical rate of rise
of on-state current
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature
V
V
A
W
W
all conduction angles
Half sine wave;<=111
half sine wave; Tj = 25
prior to surge
T=10ms
Tp=20
s
Tj=25
F=60Hz Tj=125
Tj=125
I =2*I , tr
100ns
GGT
A/
s
t=10ms
t=8.3ms
Over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-40
-
600
800
600T
800T
50
125
2
Dynamic Characteristics
D/dt
V
V
RG
V
TM
Critical rate of rise of
Off-state voltage
T =125
J
5
8
-
-
-
V
V
1.6
-
-
-
V =65% V
;R =220
;
D
DRM
GK
I=10
A
RG
A
A
A
A
AS
2
8
5
70
73
24.5
4
5
5
1
150
V/ s
I =16A tp=380
S
TM
SYMBOL
PARAMETER
CONDITIONS
MIN
T =25 C unless otherwise stated
J
O
Static characteristics
I
GT
I
L
I
H
V
TO
V
GT
V
GD
Rd
Gate trigger current
Latching current
Holding current
Threshold voltage
Tj=125
Tj=125
Gate trigger voltage
Dynamic resistance
V =12V; R =140
DL
V =12V; R =140
DL
V =V
; R =3.3K
R =220
D
DRM
L
GK
I =1mA,R =1k
GGK
IT=50mA,R =1k
GK
T =125
J
UNIT
MAX
TYP
-
-
-
-
-
5
-
-
0.85
-
-
-
46
mA
m
V
200
-
-
6
-
mA
0.8
0.1
V
V
A
-



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