AD8197ASTZ datasheet(5/32 Pages) AD

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Preliminary Data Sheet

AD8197

PrA | Page 5 of 32

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter

Rating

AVCC to AVEE

3.7 V

DVCC to DVEE

3.7 V

DVEE to AVEE

±0.3 V

VTTI

AVCC + 0.6 V

VTTO

AVCC + 0.6 V

AMUXVCC

5.5 V

Internal Power Dissipation

2.2 W

High Speed Input Voltage

AVCC − 1.4 V < VIN <

AVCC + 0.6 V

High Speed Differential Input Voltage

2.0 V

Low Speed Input Voltage

DVEE − 0.3 V < VIN <

AMUXVCC + 0.6 V

I2C and Parallel Logic Input Voltage

DVEE − 0.3 V < VIN <

DVCC + 0.6 V

Storage Temperature Range

−65°C to +125°C

Operating Temperature Range

−40°C to +85°C

Junction Temperature

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

is specified for the worst-case conditions: a device soldered

in a 4-layer JEDEC circuit board for surface-mount packages.

is specified for no airflow.

Table 3. Thermal Resistance

Package Type

Unit

100-Lead LQFP

°C/W

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8197

is limited by the associated rise in junction temperature. The

maximum safe junction temperature for plastic encapsulated

devices is determined by the glass transition temperature of the

plastic, approximately 150°C. Temporarily exceeding this limit

may cause a shift in parametric performance due to a change in

the stresses exerted on the die by the package.

Exceeding a junction temperature of 175°C for an extended

period can result in device failure. To ensure proper operation, it

is necessary to observe the maximum power rating as determined

by the coefficients in Table 3.

ESD CAUTION

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