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BLV90 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BLV90 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 10 page ![]() February 1996 8 Philips Semiconductors Product specification UHF power transistor BLV90 Fig.9 Input impedance (series components). VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb =25 °C; class-B operation; typical values. handbook, halfpage 800 1000 8 −2 0 2 4 6 840 xi ri 880 920 Zi ( Ω) f (MHz) 960 MDA396 Fig.10 Load impedance (series components). VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb =25 °C; class-B operation; typical values. handbook, halfpage 800 1000 25 15 17 19 21 23 840 XL RL 880 920 ZL ( Ω) f (MHz) 960 MDA397 Fig.11 Power gain as a function of frequency. VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb =25 °C; class-B operation; typical values. handbook, halfpage 800 12 8 4 0 850 f (MHz) Gp (dB) 900 1000 950 MDA563 |
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