February 1996

3

Philips Semiconductors

Product specification

UHF power transistor

BLV90

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Dissipation = 2.25 W

Note

1. Device mounted on a printed-circuit board (see Fig.6).

Collector-base voltage (open emitter)

max.

36 V

Collector-emitter voltage (open base)

max.

16 V

Emitter-base voltage (open collector)

max.

3 V

Collector current

DC or average

max.

0.2 A

(peak value); f

> 1 MHz

max.

0.6 A

Total power dissipation

f

max.

3.5 W

Storage temperature

−65 to + 150 °C

Operating junction temperature

max.

200

°C

> 1 MHz)

max.

60 K/W

From junction to mounting base

max.

19 K/W

Fig.2 Power/temperature curve.

I Continuous RF operation (f

> 1 MHz)

II Short-time RF operation during mismatch (f

> 1 MHz)

handbook, halfpage

0

II

I

40

80

Ptot(rf)

(W)

Tmb (°C)

160

5

0

4

120

3

2

1

MDA389