March 1993

2

Philips Semiconductors

Product specification

UHF power transistor

BLV92

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended

for use in mobile radio transmitters in the 900 MHz

communications band.

FEATURES

• multi-base structure and emitter-ballasting resistors for

an optimum temperature profile

• internal input matching to achieve an optimum wideband

capability and high power gain

• gold metallization ensures excellent reliability.

The transistor has a 6-lead flange envelope with a ceramic

cap (SOT-171). All leads are isolated from the flange.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

%

narrow band; c.w.

12,5

900

4

>

7,5

>

50

9,6

900

3

typ.

7,3

typ.

56

PINNING - SOT171A

PIN

SYMBOL

DESCRIPTION

1

e

emitter

2

e

emitter

3

b

base

4

c

collector

5

e

emitter

6

e

emitter

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM141

Top view

e

c

b

1

2

3

4

5

6

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.