BLV92 datasheet(3/11 Pages) PHILIPS

3 / 11 page

March 1993

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV92

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value

VCBOM

max.

36 V

Collector-emitter voltage (open base)

VCEO

max.

16 V

Emitter-base voltage (open collector)

VEBO

max.

3 V

Collector current

d.c. or average

max.

0,8 A

(peak value); f

> 1 MHz

ICM

max.

2,4 A

Total power dissipation

at Tmb =94 °CPtot(dc)

max.

9 W

at Tmb = 94 °C; f > 1 MHz

Ptot(rf)

max.

12 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

Rth mb-h = 0,4 K/W.

handbook, halfpage

10−1

MDA408

110

VCE (V)

(A)

102

Th = 90 °C

Fig.3 Power/temperature derating curves.

Continuous operation

II Continuous operation (f > 1 MHz)

III Short-time operation during mismatch; (f > 1 MHz)

handbook, halfpage

III

100

Ptot

(W)

Th (°C)

200

150

MDA409

THERMAL RESISTANCE

Dissipation = 6 W; Tmb = 128 °C

From junction to mounting base

(d.c. dissipation)

Rth j-mb(dc)

max.

12 K/W

(r.f. dissipation)

Rth j-mb(rf)

max.

9 K/W

From mounting base to heatsink

Rth mb-h

max.

0,4 K/W

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