IRGB/S4065PbF

www.irf.com

5

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage

Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0

50

100

150

200

250

300

VCE, Collector-toEmitter-Voltage(V)

10

100

1000

10000

100000

Cies

Coes

Cres

VGS = 0V,

f = 1 MHZ

Cies = Cge + Cgd, C ce SHORTED

Cres = Cgc

Coes = Cce + Cgc

0

10

20304050607080

Q G, Total Gate Charge (nC)

0

5

10

15

20

25

IC = 25A

VCE = 240V

VCE = 200V

VCE = 150V

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci

i

/Ri

Ci=

τi/Ri

τ

τ

C

τ

4

τ

4

R

4

R

4

Ri (°C/W)

τi (sec)

0.0239

0.000011

0.1179

0.000047

0.3264

0.000922

0.2324

0.004889