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BLV97CE Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLV97CE Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 11 page ![]() March 1993 5 Philips Semiconductors Product specification UHF power transistor BLV97CE APPLICATION INFORMATION RF performance in a common emitter test circuit. Th =25 °C, Rth mb-h = 0.4 K/W unless otherwise specified. MODE OF OPERATION f (MHz) VCE (V) IC(ZS) (mA) PL (W) GP (dB) ηc (%) c.w. class-AB 960 24 60 35 > 7 typ. 8.5 > 50 typ. 55 Fig.6 Power gain and efficiency as a function of load power; typical values. handbook, halfpage 0 12 8 4 0 10 20 40 60 0 PL (W) Gp (dB) 20 40 30 MDA445 Gp η (%) η Ruggedness in class-AB operation The BLV97CE is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VCE = 24 V; IC(ZS) = 120 mA; f = 960 MHz at rated output power. Fig.7 Load power as a function of input power; typical values. handbook, halfpage 02 PS (W) 48 50 0 40 6 30 20 10 PL (W) MDA446 |
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