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BLV97CE Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLV97CE Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 11 page ![]() March 1993 3 Philips Semiconductors Product specification UHF power transistor BLV97CE LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector base voltage open emitter − 50 V VCEO collector emitter voltage open base − 27 V VEBO emitter base voltage open collector − 3.5 V IC collector current DC or average − 3A ICM collector current peak value f > 1 MHz − 9A Ptot total power dissipation f > 1 MHz Tmb =25 °C − 70 W Tstg storage temperature −65 150 °C Tj operating junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rthj-mb from junction to mounting base (RF) − 2.3 K/W Rth mb-h from mounting base to heatsink − 0.4 K/W Fig.2 DC SOAR. handbook, halfpage 10 1 10−1 MDA441 110 VCE (V) IC (A) 102 Th = 70 °C Tmb = 25 °C Fig.3 Power/temperature derating; I: DC or RF operation; II: short-term operation during mismatch. handbook, halfpage 0 II I 40 80 Ptot (W) Th (°C) 160 100 0 80 120 60 40 20 MDA442 |
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