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BLV97CE Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BLV97CE
Description  UHF power transistor
PDF  11 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLV97CE Datasheet(HTML) 3 Page - NXP Semiconductors

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March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector base voltage
open emitter
−
50
V
VCEO
collector emitter voltage
open base
−
27
V
VEBO
emitter base voltage
open collector
−
3.5
V
IC
collector current
DC or average
−
3A
ICM
collector current
peak value
f
> 1 MHz
−
9A
Ptot
total power dissipation
f
> 1 MHz
Tmb =25 °C
−
70
W
Tstg
storage temperature
−65
150
°C
Tj
operating junction temperature
−
200
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rthj-mb
from junction to mounting base (RF)
−
2.3
K/W
Rth mb-h
from mounting base to heatsink
−
0.4
K/W
Fig.2 DC SOAR.
handbook, halfpage
10
1
10−1
MDA441
110
VCE (V)
IC
(A)
102
Th = 70 °C
Tmb = 25 °C
Fig.3
Power/temperature derating;
I: DC or RF operation;
II: short-term operation during mismatch.
handbook, halfpage
0
II
I
40
80
Ptot
(W)
Th (°C)
160
100
0
80
120
60
40
20
MDA442



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