August 1986

2

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW76

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-AB

or class-B operated high power

transmitters in the h.f. and v.h.f.

bands. The transistor presents

excellent performance as a linear

amplifier in the h.f. band. It is

resistance stabilized and is

guaranteed to withstand severe load

mismatch conditions. Transistors are

envelope with a ceramic cap. All

leads are isolated from the flange.

QUICK REFERENCE DATA

Note

1. At 80 W P.E.P.

MODE OF OPERATION

V

A

f

MHz

W

dB

η

%

dB

s.s.b. (class-AB)

28

0,05

1,6

− 28

8

− 80 (P.E.P.)

> 13

<−30

c.w. (class-B)

28

−

108

80

typ. 7,9

typ. 70

−

PIN CONFIGURATION

Fig.1 Simplified outline. SOT121B.

handbook, halfpage

MLA876

43

2

1

PINNING - SOT121B.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.