March 1993

2

Philips Semiconductors

Product specification

UHF power transistor

BLW80

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for transmitting

applications in class-A, B or C in the

u.h.f. and v.h.f. range for nominal

supply voltages up to 13,5 V.

The resistance stabilization of the

transistor provides protection against

device damage at severe load

mismatch conditions.

capstan envelope with a ceramic cap.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

η

%

Ω

mS

c.w.

12,5

470

4

>

8,0

>

60

2,1

+ j2,3

57

− j56

c.w.

12,5

175

4

typ. 15,0

typ. 60

2,0

− j2,2

51

−j48

PIN CONFIGURATION

Fig.1 Simplified outline. SOT122A.

handbook, halfpage

Top view

MBK187

3

1

2

4

PINNING - SOT122A.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.