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BLW97 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLW97 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 11 page ![]() August 1986 6 Philips Semiconductors Product specification HF power transistor BLW97 APPLICATION INFORMATION R.F. performance in s.s.b. class-AB operation (linear power amplifier). VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz. Note 1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER Gp ηdt IC d3(1) d5(1) IC(ZS) WdB % A dB dB A 175 (PEP) > 11,5 > 40 < 7,8 <−30 <−30 0,1 typ. 13,0 typ. 50 typ. 6,3 typ. −34 typ. −38 Fig.8 Class-AB (s.s.b.) test circuit. handbook, full pagewidth 50 Ω MGP709 L2 L1 R1 R2 C5 L5 L4 T.U.T. C6 L3 C11 C14 C10 C2 C1 C4 C7 C8 C9 R3 C3 VCC VBB C12 C13 50 Ω |
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