BLW97 datasheet(4/11 Pages) PHILIPS

4 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF power transistor

BLW97

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Notes

1. Measured under pulse conditions: tp = 500 µs.

2. Measured under pulse conditions: tp = 300 µs; δ = 0,02.

Collector-emitter breakdown voltage

VBE = 0; IC = 50 mA

V(BR)CES

65 V

IC = 100 mA; open base

V(BR)CEO

33 V

Emitter-base breakdown voltage

IE = 20 mA; open collector

V(BR)EBO

Collector cut-off current

VCE = 33 V; VBE =0

ICES

20 mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

20 mJ

RBE =10 Ω

ESBR

20 mJ

D.C. current gain(1)

typ.

IC = 10 A; VCE =5 V

hFE

to 50

D.C. current gain ratio of matched devices(1)

IC = 10 A; VCE =5 V

hFE1/hFE2

1,2

Collector-emitter saturation voltage(1)

IC = 25 A; IB =5 A

VCEsat

typ.

2,4 V

Transition frequency at f = 100 MHz(2)

−IE = 10 A; VCB = 28 V

typ.

230 MHz

−I

E = 20 A; VCB = 28 V

typ.

235 MHz

Collector capacitance at f = 1 MHz

IE =ie =0;VCB = 28 V

typ.

380 pF

Feedback capacitance at f = 1 MHz

IC = 0; VCE = 28 V

Cre

typ.

235 pF

Collector-ﬂange capacitance

Ccf

typ.

4,5 pF

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