BS170 datasheet(2/8 Pages) PHILIPS

2 / 8 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel vertical D-MOS transistor

BS170

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in TO-92

variant envelope and intended for use

in relay, high-speed and

line-transformer drivers.

FEATURES

• Very low R

DS(on).

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching.

• No secondary breakdown.

PINNING - TO-92 VARIANT

1 = source

2 = gate

3 = drain

QUICK REFERENCE DATA

Drain-source voltage

VDS

max.

60 V

Gate-source voltage

VGS

max.

15 V

Drain current (DC)

max.

500 mA

Total power dissipation up to Tamb =25 °CPtot

max.

830 mW

Junction temperature

max.

150

°C

Drain-source ON-resistance

VGS = 10 V; ID = 200 mA

RDS(on)

max.

Ω

PIN CONFIGURATION

Fig.1 Simplified outline and symbol.

Note: Various pin configurations available.

handbook, halfpage

MAM146

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